please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM3K12T ? small package ? low on-resistance : r on = 95 m ? (max) (@v gs = 10 v) : r on = 145 m ? (max) (@v gs = 4.5 v) ? high speed : t on = 21 ns : t off = 16 ns absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 3.0 drain current pulse i dp (note 2) 6.0 a p d (note 1) 0.7 drain power dissipation (ta = 25c) t = 10 s 1.25 w channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) note 2: the pulse width limited by max channel temperature. handling precaution when handling individual devices (which are not ye t mounted on a circuit board), be sure that the environment is protected against elec trostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contac t with devices should be made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. when using this device, please take heat dissipation fully into account. unit: mm weight: 10 mg (typ.) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
marking equivalent circuit electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 0.1 ma 1.1 ? 1.8 v forward transfer admittance |y fs | v ds = 5 v, i d = 1.5 a (note 3) 1.8 3.2 ? s i d = 1.5 a, v gs = 10 v (note 3) ? 78 95 i d = 1.5 a, v gs = 4.5 v (note 3) ? 117 145 drain-source on resistance r ds (on) i d = 1.5 a, v gs = 4.0 v (note 3) ? 135 175 m total gate charge qg v dd = 24 v, i d = 3 a, v gs = 4 v ? 2.6 ? nc input capacitance c iss v ds = 15 v, v gs = 0, f = 1 mhz ? 120 ? pf reverse transfer capacitance c rss v ds = 15 v, v gs = 0, f = 1 mhz ? 20 ? pf output capacitance c oss v ds = 15 v, v gs = 0, f = 1 mhz ? 68 ? pf rise time t r ? 13 ? turn-on time t on ? 21 ? fall time t f ? 3.6 ? switching time turn-off time t off v dd = 15 v, i d = 1.5 a v gs = 0~4 v, r g = 10 ? 16 ? ns note 3 : pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. kdj 3 1 2 3 12 (a) test circuit 4 v 0 i d in out v dd 10 s r g r l v dd = 15 v r g = 10 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c t on t off (b) v in (c) v out 4 v 0 v dd v ds (on) t r t f 10% 90% 90% 10% 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3K12T smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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